Szczegóły obiektu: THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy

Instytucja dostarczająca:Czasopisma PAN

Opis

Title:
THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
Creator:
Marczewski, J.;
Coquillat, D.;
Knap, W.;
Kolacinski, C.;
Kopyt, P.;
Kucharski, K.;
Lusakowski, J.;
Obrebski, D.;
Tomaszewski, D.;
Yavorskiy, D.;
Zagrajek, P.;
Ryniec, R.;
Palka, N.
Description:
Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged. It has been established for the publication of high-quality original papers from the following fields: Optical Design and Applications, Image Processing (without AI Algorithm Optimisation) Plasmonics, nanooptics, and metamaterials, Optoelectronic Materials, Micro-Opto-Electro-Mechanical Systems, Infrared Physics and Technology, Modelling of Optoelectronic Devices, Semiconductor Lasers Technology and Fabrication of Optoelectronic Devices, Photonic Crystals, Laser Physics, Technology and Applications, Optical Sensors and Applications, Photovoltaics, Biomedical Optics and Photonics Submit your article Journal Metrics: JCR Impact Factor 2023: 1.3 5 Year Impact Factor 2022: 2 SCImago Journal Rank (SJR) 2023: 0.267 Source Normalized Impact per Paper (SNIP) 2023: 0.525 CiteScore 2023: 1.9 Ministry of Education and Science 2021*: 100 points * changed Dec. 1st, 2021 From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites: Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues Years 2015-2016: https://www.degruyter.com/view/j/oere Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772 Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm;
DOFINANSOWANO ZE ŚRODKÓW BUDŻETU PAŃSTWA Rozwój czasopism naukowych Nr projektu: RCN/SN/0652/2021/1 Dofinansowanie: 85 700 zł Całkowita wartość: 85 700 zł Data podpisania umowy: 6 grudnia 2022 r. Celem projektu jest wsparcie działalności wydawniczej Opto-Electronics Review w zakresie poprawy widoczności czasopisma na arenie krajowej i międzynarodowej oraz podwyższenia jakości edytorskiej prezentowanych treści. CO-FINANCED FROM THE STATE BUDGET Development of scientific journals Project number: RCN/SN/0652/2021/1 Funding: PLN 85,700 Total value: PLN 85,700 Date of signing the contract: December 6, 2022. The project aims to support the publishing activities of Opto-Electronics Review to improve the journal's visibility in the national and international arena and increase the editorial quality of the presented content. Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded. Articles are published in OPELRE in the following categories: -invited reviews presenting the current state of the knowledge, -specialized topics at the forefront of optoelectronics and photonics and their applications, -refereed research contributions reporting on original scientific or technological achievements, -conference papers printed in normal issues as invited or contributed papers. Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE. Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP. Abstracting and Indexing: Arianta BazTech EBSCO relevant databases EBSCO Discovery Service SCOPUS relevant databases ProQuest relevant databases Clarivate Analytics relevant databases WangFang additionally: ProQuesta (Ex Libris, Ulrich, Summon) Google Scholar
Object availability:
Dostęp otwarty
Rights:
Opto-Electronics Review is an open access journal with all content available with no charge for readers in full text version. The journal content is available under the licencse CC BY-SA 4.0
Date:
2018.09.13
Type:
Article
Source:
Opto-Electronics Review; 2018; vol. 26; No 4; 261-269
Coverage:
261-269
Publisher:
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology
Subject:
Nauki Techniczne
Identifier:
ISSN 1896-3757
Data provider:
Czasopisma PAN

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Szczegóły obiektu: THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy

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